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2D Numerical modeling developments for inductively coupled plasma carburizing process
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- Authors
- Advisor
- 이정중
- Major
- 공과대학 재료공학부
- Issue Date
- 2014-02
- Publisher
- 서울대학교 대학원
- Keywords
- Inductively coupled plasma ; ICP ; carburizing ; plasma simulation ; CFD-ACE ; plasma chemistry
- Description
- 학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2014. 2. 이정중.
- Abstract
- A 2D axis-symmetric numerical model using CFD-ACE was performed for plasma carburizing process. The particle conservation equation, drift-diffusion and energy conservation equation were used to calculate the density distribution of electrons and ions at various argon to methane gas ratios. It was found that the plasma, hydro-carbon ion densities and electron temperature increased with increasing the argon content in the carburizing chamber. During plasma carburizing, DC bias is applied to the substrate, thus the most important species for carburizing might be hydrocarbon ions. At low CH4 fraction, the model predicted more amount of CHx+ ions are generated than C2Hy+ ions. The amount of free carbon, which diffuses into the substrate, during plasma carburization process was predicted by plasma modeling. The predictions of carbon concentration in the below substrate showed matching values to the experimental results.
- Language
- English
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