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Post-annealing effects on the structural and optical properties of Zn(S,O) buffer layer for thin-film solar cells : 후열처리에 따른 Zn(S,O) Buffer Layer의 구조적, 광학적 특성 변화
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박병우 | - |
dc.contributor.author | 이성준 | - |
dc.date.accessioned | 2017-07-14T03:14:53Z | - |
dc.date.available | 2017-07-14T03:14:53Z | - |
dc.date.issued | 2013-02 | - |
dc.identifier.other | 000000008613 | - |
dc.identifier.uri | https://hdl.handle.net/10371/123415 | - |
dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2013. 2. 박병우. | - |
dc.description.abstract | The structural and optical properties of Zn(S,O) buffer layers were investigated by post-annealing in air. As the annealing temperature increased to 500℃, the optical bandgap of the Zn(S,O) thin films decreased from 3.59 eV to 2.97 eV.This optical bandgap narrowing was correlated with the composition change of the films by post-annealing. The S/Zn ratio decreased from 0.60 to 0.47, as confirmed by EDX analysis. TheZn(S,O) thin film applied to blocking layer in dye-sensitized solar cells diminished the power-conversion efficiency. One possible reason is that the Zn(S,O) blocking layer prohibits the injection of electron from ZnO to FTO, because of thickZn(S,O) layer.
Micrometer-sized polydispersed Al doped ZnO aggregates made up of nanoparticles were synthesizedby a hydrolysis method for photoelectrode in DSSCs. The Al doping on ZnO aggregates resulted the decrease ofopen-circuit voltage (Voc) and short-circuit current (Jsc). Consequently, the power-conversion efficiency decreased to 0.92%. The local strain and grain size of ZnO increased with increasing doping concentration.In addition,the morphology of ZnO nanoparticles that compose the aggregateswas changed to nanorod. The nanorodwill decrease the surface area for dye adsorption than nanoparticle and it may cause decreased cell efficiency. | - |
dc.description.tableofcontents | Abstract
List of Figures List of Tables Chapter 1. Overview 1.1 CIGS Solar Cells 1.2 Buffer Layer of CIGS Solar Cells 1.3 Introduction to Dye-Sensitized Solar Cells 1.4 References Chapter 2. Post-Annealing Effects on the Structural and Optical Properties of Zn(S,O) Buffer Layer for Thin-Film Solar Cells 2.1 Introduction 2.2 Experiments 2.3 Results and Discussion 2.4 Conclusions 2.5 References Chapter 3. The Effect of Al Doping on the Performancein Nanoporous ZnO-Based Dye-Sensitized Solar Cells 3.1 Introduction 3.2 Experiments 3.3 Results and Discussion 3.4 Conclusions 3.5 References 국문초록 | - |
dc.format | application/pdf | - |
dc.format.extent | 2970933 bytes | - |
dc.format.medium | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | - |
dc.subject.ddc | 620 | - |
dc.title | Post-annealing effects on the structural and optical properties of Zn(S,O) buffer layer for thin-film solar cells | - |
dc.title.alternative | 후열처리에 따른 Zn(S,O) Buffer Layer의 구조적, 광학적 특성 변화 | - |
dc.type | Thesis | - |
dc.contributor.AlternativeAuthor | Sungjun Lee | - |
dc.description.degree | Master | - |
dc.citation.pages | 58 | - |
dc.contributor.affiliation | 공과대학 재료공학부(하이브리드 재료) | - |
dc.date.awarded | 2013-02 | - |
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