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Deposition behavior and dielectric properties of high dielectric constant oxide thin films
고유전율 산화물 박막의 증착 거동 및 유전 특성

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Authors
노상용
Advisor
김형준
Issue Date
2006
Publisher
서울대학교 대학원
Keywords
high-κhigh-κMOCVDMOCVDALDALDTiO2TiO2Al2O3Al2O3AlNAlNLa2O3La2O3증착거동deposition behavior누설전류leakage current mechanism밴드갭band gapXPSXPS계면트랩밀도interface trap density
Description
Thesis(doctoral)--서울대학교 대학원 :재료공학부,2006.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000046482

http://hdl.handle.net/10371/12648
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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