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Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 엄명윤 | - |
| dc.date.accessioned | 2009-11-18 | - |
| dc.date.available | 2009-11-18 | - |
| dc.date.copyright | 2004. | - |
| dc.date.issued | 2004 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000056016 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/12686 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2004. | eng |
| dc.format.extent | xvii, 181 leaves | eng |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | Physical Vapor Transport (PVT) | eng |
| dc.subject | Physical vapor transport (PVT) | eng |
| dc.subject | 6H | eng |
| dc.subject | 6H-SiC | eng |
| dc.subject | 4H-SiC | eng |
| dc.subject | 4H-SiC | eng |
| dc.subject | 단결정 | eng |
| dc.subject | Single crystal | eng |
| dc.subject | 도가니 디자인 | eng |
| dc.subject | Crucible design | eng |
| dc.subject | 결함 passivation | eng |
| dc.subject | Defect passivation | eng |
| dc.subject | 실시간 erbium 도핑 | eng |
| dc.subject | In situ erbium doped 4H-SiC | eng |
| dc.title | Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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