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Growth of In-rich InGaNGaN quantum well structures using growth interruption and analysis on structural and optical properties : 성장정지를 이용한 In-rich InGaNGaN 양자우물 구조의 성장 및 구조적 광학적 특성 분석

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author권순용-
dc.date.accessioned2009-11-18-
dc.date.available2009-11-18-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052250eng
dc.identifier.urihttps://hdl.handle.net/10371/12699-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :재료공학부,2005.eng
dc.format.extent143 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject유기금속화학기상증착법 (MOCVD)eng
dc.subjectmetal-organic chemical vapor deposition (MOCVD)eng
dc.subject초박막 (ultra-thin) In-rich InGaNeng
dc.subjectultra-thin In-rich InGaNeng
dc.subject양자우물 (QW)eng
dc.subjectquantum well (QW)eng
dc.subject성장 정지 (GI)eng
dc.subjectgrowth interruption (GI)eng
dc.subject내부 형성 전기장 (built-in electric field)eng
dc.subjectbuilt-in electric fieldeng
dc.subject캐리어 가둠 (carrier localization)eng
dc.subjectlocalization centerseng
dc.subject이차원 성장법 (two-step growth method)eng
dc.subjecttwo-step growth methodeng
dc.titleGrowth of In-rich InGaNGaN quantum well structures using growth interruption and analysis on structural and optical propertieseng
dc.title.alternative성장정지를 이용한 In-rich InGaNGaN 양자우물 구조의 성장 및 구조적 광학적 특성 분석eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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