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Growth of In-rich InGaNGaN quantum well structures using growth interruption and analysis on structural and optical properties : 성장정지를 이용한 In-rich InGaNGaN 양자우물 구조의 성장 및 구조적 광학적 특성 분석
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 윤의준 | - |
dc.contributor.author | 권순용 | - |
dc.date.accessioned | 2009-11-18 | - |
dc.date.available | 2009-11-18 | - |
dc.date.copyright | 2005. | - |
dc.date.issued | 2005 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052250 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/12699 | - |
dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005. | eng |
dc.format.extent | 143 leaves | eng |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | 유기금속화학기상증착법 (MOCVD) | eng |
dc.subject | metal-organic chemical vapor deposition (MOCVD) | eng |
dc.subject | 초박막 (ultra-thin) In-rich InGaN | eng |
dc.subject | ultra-thin In-rich InGaN | eng |
dc.subject | 양자우물 (QW) | eng |
dc.subject | quantum well (QW) | eng |
dc.subject | 성장 정지 (GI) | eng |
dc.subject | growth interruption (GI) | eng |
dc.subject | 내부 형성 전기장 (built-in electric field) | eng |
dc.subject | built-in electric field | eng |
dc.subject | 캐리어 가둠 (carrier localization) | eng |
dc.subject | localization centers | eng |
dc.subject | 이차원 성장법 (two-step growth method) | eng |
dc.subject | two-step growth method | eng |
dc.title | Growth of In-rich InGaNGaN quantum well structures using growth interruption and analysis on structural and optical properties | eng |
dc.title.alternative | 성장정지를 이용한 In-rich InGaNGaN 양자우물 구조의 성장 및 구조적 광학적 특성 분석 | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Doctor | eng |
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