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Formation of low-resistance W thin film using B2H6-reduced W nucleation layer and its application for a bit line of an advanced memory devices : 다이보렌 환원법에 의한 텅스텐 핵생성층을 이용한 저저항 텅스텐 박막의 형성과 차세대 메모리소자의 비트라인에의 응용에 관한 연구

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author김춘환-
dc.date.accessioned2009-11-18-
dc.date.available2009-11-18-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038139eng
dc.identifier.urihttps://hdl.handle.net/10371/12713-
dc.descriptionThesis(doctors) --서울대학교 대학원 :재료공학부,2009.8.eng
dc.format.extentxviii, 153 p.eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject화학기상텅스텐eng
dc.subjectCVD-Weng
dc.subject저저항 텅스텐eng
dc.subjectLow Resistive CVD-Weng
dc.subject원자층 증착 텅스텐eng
dc.subjectALD-Weng
dc.subject펄스방식의 텅스텐eng
dc.subjectpulsed CVD-Weng
dc.subject다이보렌eng
dc.subjectB2H6eng
dc.subject사일렌eng
dc.subjectSiH4eng
dc.subject접착력eng
dc.subjectAdhesioneng
dc.subject접합누설전류eng
dc.subjectJunction Leakage Currenteng
dc.subject포화드레인 전류eng
dc.subjectSaturation Drain Currenteng
dc.subject비트라인eng
dc.subjectBit lineeng
dc.titleFormation of low-resistance W thin film using B2H6-reduced W nucleation layer and its application for a bit line of an advanced memory deviceseng
dc.title.alternative다이보렌 환원법에 의한 텅스텐 핵생성층을 이용한 저저항 텅스텐 박막의 형성과 차세대 메모리소자의 비트라인에의 응용에 관한 연구eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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