Fabrication and characterization of planar 4H-SiC metal semiconductor field effect transistors for microwave power device applications

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Fabrication and characterization of planar 4H-SiC metal semiconductor field effect transistors for microwave power device applications

DC Field	Value	Language
dc.contributor.advisor	김형준	-
dc.contributor.author	나훈주	-
dc.date.accessioned	2009-11-18T02:02:52Z	-
dc.date.available	2009-11-18T02:02:52Z	-
dc.date.copyright	2005.	-
dc.date.issued	2005	-
dc.identifier.uri	http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050053	eng
dc.identifier.uri	https://hdl.handle.net/10371/12716	-
dc.description	Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005.	eng
dc.format.extent	xv, 148 leaves	eng
dc.language.iso	en	-
dc.publisher	서울대학교 대학원	eng
dc.subject	4H-탄화규소	eng
dc.subject	4H-SiC	eng
dc.subject	MESFET	eng
dc.subject	MESFET	eng
dc.subject	이온주입	eng
dc.subject	Ion-implantation	eng
dc.subject	오믹접합	eng
dc.subject	Ohmic contact	eng
dc.subject	쇼트키접합	eng
dc.subject	Schottky contact	eng
dc.subject	게이트 구조	eng
dc.subject	Gate dimension	eng
dc.subject	전도성 기판	eng
dc.subject	Conducting substrate	eng
dc.subject	반절연 기판	eng
dc.subject	Semi-insulating substrate	eng
dc.subject	소신호등가회로	eng
dc.subject	Small-signal equivalent circuit	eng
dc.title	Fabrication and characterization of planar 4H-SiC metal semiconductor field effect transistors for microwave power device applications	eng
dc.type	Thesis	-
dc.contributor.department	재료공학부	-
dc.description.degree	Doctor	eng

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