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Fabrication and characterizations of self-aligned poly-Si gate transistors using HfO₂thin films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 황철성 | - |
| dc.contributor.author | 박재후 | - |
| dc.date.accessioned | 2009-11-18T02:23:01Z | - |
| dc.date.available | 2009-11-18T02:23:01Z | - |
| dc.date.copyright | 2005. | - |
| dc.date.issued | 2005 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050054 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/12734 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005. | eng |
| dc.format.extent | xii, 152 leaves | eng |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 고유전률 | eng |
| dc.subject | High-k | eng |
| dc.subject | HfO2 | eng |
| dc.subject | HfO2 | eng |
| dc.subject | ALD | eng |
| dc.subject | ALD | eng |
| dc.subject | 원료물질 | eng |
| dc.subject | precursors | eng |
| dc.subject | 산화제 | eng |
| dc.subject | oxidants | eng |
| dc.subject | 신뢰성 | eng |
| dc.subject | reliability | eng |
| dc.subject | MOSFET | eng |
| dc.subject | MOSFET | eng |
| dc.subject | 누설전류기구 | eng |
| dc.subject | leakage current mechanism | eng |
| dc.subject | 계면트랩 | eng |
| dc.subject | interface trap density | eng |
| dc.subject | 전하이동도 | eng |
| dc.subject | channel mobility | eng |
| dc.title | Fabrication and characterizations of self-aligned poly-Si gate transistors using HfO₂thin films | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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