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(The)Growth of In(Ga)NGaN nanostructures by metalorganic chemical vapor deposition : 유기금속기상화학증착법을 이용한 In(Ga)NGaN 나노구조 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author김현진-
dc.date.accessioned2009-11-18T03:00:05Z-
dc.date.available2009-11-18T03:00:05Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053661eng
dc.identifier.urihttps://hdl.handle.net/10371/12802-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :재료공학부,2004.eng
dc.format.extent129 p.eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject유기금속기상화학증착법 (MOCVD)eng
dc.subjectMetalorganic chemical vapor deposition (mocvd)eng
dc.subjectGaNeng
dc.subjectGaneng
dc.subjectInGaNeng
dc.subjectInganeng
dc.subjectInNeng
dc.subjectInneng
dc.subject나노구조eng
dc.subjectNanostructureeng
dc.subject양자점eng
dc.subjectQuantum dot (qd)eng
dc.subject양자우물eng
dc.subjectQuantum well (qw)eng
dc.subject암모니아 가열기eng
dc.subjectAmmonia preheatereng
dc.subject성장정지eng
dc.subjectGrowth interruption (gi)eng
dc.title(The)Growth of In(Ga)NGaN nanostructures by metalorganic chemical vapor depositioneng
dc.title.alternative유기금속기상화학증착법을 이용한 In(Ga)NGaN 나노구조 성장eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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