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Optical characterization and device fabrication of semiconductor micro- and nanostructures and their bio-applications

DC Field Value Language
dc.contributor.advisor이규철-
dc.contributor.author백현준-
dc.date.accessioned2017-07-19T06:11:18Z-
dc.date.available2017-07-19T06:11:18Z-
dc.date.issued2016-08-
dc.identifier.other000000136049-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000136049-
dc.description학위논문(박사)--서울대학교 대학원 :자연과학대학 물리·천문학부,2016. 8. 이규철.-
dc.description.abstractSemiconductor micro- and nanostructures are promising building blocks for high-performance and high-resolution photonic devices due to their novel properties such as high material-quality, small foot-print, and so on. Furthermore, since they have small size sufficient to probe mammalian cells with subcellular resolution, semiconductor micro- and nanostructures based probes have possibility to provide revolutionary tools to investigate biological materials and systems. To realize the promising possibility of micro- and nanostructures, they should be scalable, well-controllable, and mechanically flexible. However, fabrication of micro- and nanostructure arrays satisfying these condition have been difficult due to problems related with material growth. In this thesis, it is demonstrated that this issue can be overcome by using graphene films. Optical characterization and device fabrication of semiconductor micro- and nanostructures grown on chemically vapor deposited (CVD) graphene films are studied. Using graphene films as intermediate layers to grow II-VI and III-V semiconductor micro- and nanostructures, it can be possible to fabricate well-controlled nano-waveguides and high-quality micro- and nanolasers. Furthermore, semiconductor micro- and nanostructures grown on graphene can be readily lifted off exploiting weak bonding between graphene films and supporting substrates by van der Waals force and transferred to foreign substrates that can complement the lasing performance and expand the application of lasers.
ZnO nanotube laser arrays with low lasing thresholds and clear laser oscillations by Fabry-Perot (FP) resonance were monolithically fabricated on arbitrary substrates by using graphene films as intermediate layers. Moreover, exploiting the benefit of easy transfer, nanotubes were combined with silver films after the lift-off, which significantly enhanced lasing characteristics of nanotubes. In addition to ZnO one-dimensional laser arrays, lasing characteristics of GaN microdisk and microrods grown on CVD graphene films were also studied. Highly crystalline GaN microdisks having hexagonal facets were grown on graphene dots, and whispering-gallery-mode (WGM) lasing emissions from the GaN microdisks were observed. For GaN microrods, detection of FP and WGM lasing emissions from a single GaN microrod are reported. Additionally, demonstration the ability to switch between the two lasing mechanisms by translating the excitation beam along the microrod are described. Finally, using the advantageous properties of semiconductor nanostructures on graphene films, metal-deposited ZnO nanotube waveguide arrays were used for local optical excitation on biological cells. Mammalian cells were cultured on nanotube arrays and fluorescent dyes in cells were locally excited by light transmitted through nanotube waveguides.
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dc.description.tableofcontentsChapter 1. Introduction 1
1.1. Motivation: The potential and issues of semiconductor micro- and nanostructures for photonic devices and biological applications 1
1.2. Objective and approach 3
1.3. Outline 4

Chapter 2. Literature review 5
2.1. Bottom-up approach for micro- and nano-sized photonic devices 5
2.2. Lasing characteristics of semiconductor micro- and nanostructures 6
2.2.1. Fabry-Perot lasing emissions 6
2.2.2. Whispering-gallery mode lasing emissions 15
2.3. One-dimensional nanostructure probes for studying cellular events 21
2.3.1. Intracelluar nanostructure probes 21

Chapter 3. Experimental methods 27
3.1. Photoluminescence measurement 28
3.1.1. Confocal micro-photoluminescence measurement 28
3.1.2. Macro-photoluminescence measurement 31
3.1.3. Photoluminescence measurement at high pumping density 33
3.2. Electroluminescence measurement 37
3.3. Metal-organic chemical-vapor deposition of ZnO and ZnMgO nanotubes 38
3.3.1. Vertical ZnO nanotube growth 38
3.3.2. Lateral ZnO and ZnMgO growth 38
3.4. Transfer of semiconductor micro- and nanostructures 39
3.4.1. Random transfer of micro- and nanostructures onto SiO2/Si substrates for individual characterization 39
3.4.2. Mechanical lift-off of ZnO nanotube arrays 41
3.4.3. Wet chemical lift-off of GaN microstructure arrays 41
3.5. Light-emitting diodes fabrication 42
3.5.1. Addressable light-emitting diode pixel fabrication 42
3.5.2. Transferrable three-dimensional micro- and nanostructure light-emitting diodes fabrication 45
3.6. Finite-difference time-domain simulation 49

Chapter 4. Lasing characteristics of one-dimensional ZnO nanostructures 50
4.1. Introduction 50
4.2. Simulated emission characteristics of position- and dimension-controlled ZnO nanotube arrays 52
4.2.1. Position- and dimension-controlled growth of ZnO nanotubes on GaN/Si 52
4.2.2. Stimulated emission characteristics of ZnO nanotubes 55
4.2.3. Origin for stimulated emission 61
4.3. Lasing characteristics of ZnO nanotubes grown on graphene films 63
4.3.1. ZnO nanotube growth on CVD graphene films 64
4.3.2. Lasing characteristics of ZnO nanotubes grown on CVD graphene films 67
4.3.3. Transfer of ZnO nanotubes 76
4.3.4. Lasing characteristics of ZnO nanotubes on different substrates 78
4.3.5. Finite-difference time-domain simulation 82
4.4. Lasing characteristics of ZnMgO nanotubes 86
4.4.1. ZnMgO nanotube growth 86
4.4.2. Lasing peak dependence 89
4.4.3. Threshold dependence on Mg content 90
4.4.4. Transfer of ZnMgO nanotube arrays 91
4.5. Summary 92

Chapter 5. Lasing characteristics of GaN micro- and nanostructures grown on CVD graphene films 93
5.1. Introduction 93
5.2. Dependence of lasing emissions of GaN on the excitation geometry 95
5.2.1. Different lasing peak positions for macro- and micro-PL set-up 95
5.2.2. Lasing peak positions with different focusing heights 99
5.2.3. Origin for different peak positions of GaN 101
5.2.4. Different lasing emissions in GaN microrods 101
5.2.5. Different lasing emission in GaN pyramids 104
5.3. GaN microdisk lasers grown on graphene microdot arrays 106
5.3.1. GaN microdisk growth 107
5.3.2. Structural properties of microdisks on CVD graphene microdots 110
5.3.3. Spatially-resolved optical properties of the GaN microdisk 115
5.3.4. Lasing characteristics of GaN microdisks on CVD graphene GaN microdots 117
5.4. Lasing characteristics of GaN microrods grown CVD graphene films 122
5.4.1. GaN microrods growth 123
5.4.2. Fabry-Perot lasing characteristics of GaN microrods 125
5.4.3. Whispering-gallery mode lasing characteristics of GaN microrods 128
5.4.4. Diameter dependence for dominant resonance in GaN microrods 131
5.4.5. Simultaneous FP and WGM lasing emissions in GaN microrods 133
5.5. Summary 138

Chapter 6. Nanostructure waveguide arrays for local optical excitation on biological cells 139
6.1. Introduction 139
6.2. Nanotube waveguide arrays for local optical excitation 140
6.2.1. Metal-coated nanotube waveguide fabrication 140
6.2.2. Light transmission through nanotubes 143
6.2.3. FDTD simulation 145
6.2.4. Cells grown on nanotube arrays 148
6.2.5. Fluorescence excitation using nanotube waveguide arrays 151
6.2.6. Fluorescence excitation using a single nanotube illumination 154
6.2.7. Nanotube waveguide arrays on LED pixel arrays 156
6.3. Summary 158

Chapter 7. Conclusion and outlook 159
7.1. Summary 159
7.2. Future works and outlook 161

References 164

Summary in Korean 174
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dc.format.extent184-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subjectsemiconductor nanostructure-
dc.subject.ddc523-
dc.titleOptical characterization and device fabrication of semiconductor micro- and nanostructures and their bio-applications-
dc.typeThesis-
dc.typeDissertation-
dc.contributor.department자연과학대학 물리·천문학부-
dc.description.degreeDoctor-
dc.date.awarded2016-08-
dc.identifier.holdings000000000028▲000000000029▲000000136049▲-
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