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Atomic layer deposition of high-k HfO2 using Hf(O-iPr)4 and Hf(NMe2)4 as Hf precursors : Hf(O-iPr)4 와 Hf(NMe2)4를 Hf 전구체로 사용한 고유전 HfO2의 원자층증착

DC Field Value Language
dc.contributor.advisor문상흡-
dc.contributor.author김정찬-
dc.date.accessioned2009-11-18T04:57:52Z-
dc.date.available2009-11-18T04:57:52Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038228eng
dc.identifier.urihttps://hdl.handle.net/10371/12992-
dc.descriptionThesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8.eng
dc.format.extentxi, 89 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject하프늄 산화물eng
dc.subjecthafnium oxideeng
dc.subject원자층 증착eng
dc.subjectatomic layer depositioneng
dc.subject유전물질eng
dc.subjectdielectriceng
dc.subject게이트 산화물eng
dc.subjectgate oxideeng
dc.subject이소프로폭사이드eng
dc.subjectisopropoxideeng
dc.subject디메틸아민eng
dc.subjectdimethylamineeng
dc.titleAtomic layer deposition of high-k HfO2 using Hf(O-iPr)4 and Hf(NMe2)4 as Hf precursorseng
dc.title.alternativeHf(O-iPr)4 와 Hf(NMe2)4를 Hf 전구체로 사용한 고유전 HfO2의 원자층증착eng
dc.typeThesis-
dc.contributor.department화학생물공학부-
dc.description.degreeDoctoreng
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