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Atomic layer deposition of high-k HfO2 using Hf(O-iPr)4 and Hf(NMe2)4 as Hf precursors : Hf(O-iPr)4 와 Hf(NMe2)4를 Hf 전구체로 사용한 고유전 HfO2의 원자층증착
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 문상흡 | - |
dc.contributor.author | 김정찬 | - |
dc.date.accessioned | 2009-11-18T04:57:52Z | - |
dc.date.available | 2009-11-18T04:57:52Z | - |
dc.date.copyright | 2009. | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038228 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/12992 | - |
dc.description | Thesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8. | eng |
dc.format.extent | xi, 89 leaves | eng |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | 하프늄 산화물 | eng |
dc.subject | hafnium oxide | eng |
dc.subject | 원자층 증착 | eng |
dc.subject | atomic layer deposition | eng |
dc.subject | 유전물질 | eng |
dc.subject | dielectric | eng |
dc.subject | 게이트 산화물 | eng |
dc.subject | gate oxide | eng |
dc.subject | 이소프로폭사이드 | eng |
dc.subject | isopropoxide | eng |
dc.subject | 디메틸아민 | eng |
dc.subject | dimethylamine | eng |
dc.title | Atomic layer deposition of high-k HfO2 using Hf(O-iPr)4 and Hf(NMe2)4 as Hf precursors | eng |
dc.title.alternative | Hf(O-iPr)4 와 Hf(NMe2)4를 Hf 전구체로 사용한 고유전 HfO2의 원자층증착 | eng |
dc.type | Thesis | - |
dc.contributor.department | 화학생물공학부 | - |
dc.description.degree | Doctor | eng |
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