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(A) novel cyclic depositionetching process to obtain bowing-free SiO2 contact holes : 산화막 콘택홀의 벽면 벌어짐 현상을 개선하기 위한 새로운 식각 공정의 개발

DC Field Value Language
dc.contributor.advisor문상흡-
dc.contributor.author이진관-
dc.date.accessioned2009-11-18T04:58:48Z-
dc.date.available2009-11-18T04:58:48Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038234eng
dc.identifier.urihttps://hdl.handle.net/10371/12995-
dc.descriptionThesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8.eng
dc.format.extentxvi, 127 p.eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject산화막eng
dc.subjectBowingeng
dc.subject콘택홀eng
dc.subjectNeckingeng
dc.subject벽면 벌어짐eng
dc.subjectcontact holeeng
dc.subjectplasma etchingeng
dc.subjectC4F6eng
dc.title(A) novel cyclic depositionetching process to obtain bowing-free SiO2 contact holeseng
dc.title.alternative산화막 콘택홀의 벽면 벌어짐 현상을 개선하기 위한 새로운 식각 공정의 개발eng
dc.typeThesis-
dc.contributor.department화학생물공학부-
dc.description.degreeDoctoreng
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