Research on vertically-stacked microscale organic resistive nonvolatile memory devices

Abstract

PI:PCBM(polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) ) is a promising organic memory material due to its low cost fabrication and solution processbility.. PI:PCBM shows that unipolar memory characteristic and have good memory ON-OFF ratio.The 7 µm × 7 µm cell size vertically-stacked organic memory devices were possible with an orthogonal photolithography technique by using a highly fluorinated photoresist. The vertically-stacked microscale organic memory devices showed high reproducibility with good endurance cycle and stability with long retention time over 104 s for both layers. With fluorous solvents, othogonality is an important property that is required to protect the underlying organic memory layers (PI:PCBM) from the addition of lithographic chemicals and allow the removal of the unused part of the deposited photoresist layer by the fluorent developing solvents.Using this highly fluorent material, we highly integrated polymer type memory.