(The) structural or electrical properties change of Ba1-xKxBiO3 films via controlling laser fluence and buffer layer by using Pulsed Laser Deposition

Abstract

We investigated growth control of superconducting properties of BKBO films, by varying laser fluence using pulsed laser deposition technique. As cation stoichiometry, especially potassium concentration in BKBO films, was sensitively changed with laser fluence, we were able to precisely control Tc of BKBO films. Following the trend of the bulk phase diagram, Tc showed the highest value of 24.5 ± 0.5 K at the optimal stoichiometry. Furthermore, we obtained a partially tensile-strained BKBO film with BaBiO3 buffer layer, and a well tensile-strained BKBO film with a BaCeO3 / BaZrO3 double buffer layer. In the both case, we observed sharp full-width-half-maximum of the BKBO (002) reflection rocking curve in X-ray diffractometer measurement, which shows the potential for BKBO films with few crystallographic defects by reducing the lattice mismatch with various buffer layer.