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Threshold behavior in kinetic clectron emission from the surface of oxide insulators : 산화물 절연체에서 표면에서 운동에너지 전달 전자 방출의 문턱거동

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dc.contributor.advisor이지화-
dc.contributor.author김한국-
dc.date.accessioned2009-11-18T06:07:27Z-
dc.date.available2009-11-18T06:07:27Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000044002eng
dc.identifier.urihttps://hdl.handle.net/10371/13166-
dc.description학위논문(석사) --서울대학교 대학원 :화학생물공학부,2007.eng
dc.format.extent48 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subject옥사이드 절연체; MgO BaO SiO2eng
dc.subjectOxide insulators; MgO BaO SiO2eng
dc.subject이차전자 방출계수 γieng
dc.subjection-induced secondary electron emissioneng
dc.subjectAC 펄스 이온빔eng
dc.subjectγieng
dc.subject역치에너지eng
dc.subjectAC pulsed ion beameng
dc.subject표면 이온화 에너지eng
dc.subjectsurface ionization potentialeng
dc.subject이차전자 방출 과정eng
dc.subjectkinetic emission mechanism.eng
dc.titleThreshold behavior in kinetic clectron emission from the surface of oxide insulatorseng
dc.title.alternative산화물 절연체에서 표면에서 운동에너지 전달 전자 방출의 문턱거동eng
dc.typeThesis-
dc.contributor.department화학생물공학부-
dc.description.degreeMastereng
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