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Fabrication of Micropatterned ZnO Semiconductor Films via Chemical Imprinting
화학적 임프린팅을 이용한 마이크로패턴의 산화아연 반도체 박막 형성에 관한 연구

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Authors
성기은
Advisor
김연상
Major
융합과학기술대학원 융합과학부(나노융합전공)
Issue Date
2013-02
Publisher
서울대학교 대학원
Keywords
imprint lithographysoft lithographysolution-processed Zinc oxide(ZnO)thin films transistors (TFTs)selective chemical etching
Description
학위논문 (석사)-- 서울대학교 융합과학기술대학원 : 융합과학부(나노융합전공), 2013. 2. 김연상.
Abstract
Herein, we demonstrated a new patterning method via chemical imprinting with an ammonia-soaked PDMS stamp on the ZnO semiconductor films. The diffused ammonia liquid or gas from the PDMS stamp with fine structures selectively transformed the ZnO films to a water-soluble form (as [Zn(NH3)4-n(OH)n]2-n) at the contact surfaces, and these selectively transformed aqueous salt patterns were dissolved in water. Thus, the array of ZnO
micro-patterns were easily fabricated and successfully applied to the active layers of TFTs. In addition, we fabricated the micro-patterns on Li doped ZnO semiconductor films, which have high carrier mobility and low temperature sintering at 300 °C.
The present study demonstrates the representative
micro-patterned Li doped ZnO TFTs with the field effect
mobility of 4.2 cm2·V-1·s-1, on/off current ratio of 8.3 x 107 and low gate leakage current using this chemical imprinting. This patterning method has a good potential for advanced patterning process toward solution-processed ZnO TFTs with high performance
it can be applied to continuous processes at ambient conditions, such as the roll to roll process, and does not require any cumbersome steps.
Language
English
URI
http://hdl.handle.net/10371/133263
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Graduate School of Convergence Science and Technology (융합과학기술대학원)Dept. of Transdisciplinary Studies(융합과학부)Theses (Master's Degree_융합과학부)
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