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Non-volatile Memory Effect of Redox Proteins : 환원 단백질의 비휘발성 메모리 효과
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김연상 | - |
dc.contributor.author | 이지현 | - |
dc.date.accessioned | 2017-07-19T11:01:42Z | - |
dc.date.available | 2017-07-19T11:01:42Z | - |
dc.date.issued | 2012-08 | - |
dc.identifier.other | 000000004123 | - |
dc.identifier.uri | https://hdl.handle.net/10371/133298 | - |
dc.description | 학위논문 (석사)-- 서울대학교 융합과학기술대학원 : 나노융합학과, 2012. 8. 김연상. | - |
dc.description.abstract | In this paper, we demonstrated non-volatile memory effect of redox proteins such as myoglobin, hemoglobin, and cytochrome c. Also, we introduced the fabrication of non-volatile organic field-effect transistor (OFET) memory utilizing myoglobin as a charge trapping element. Redox proteins are composed of a heme structure containing an iron atom, which have an effect on charge trapping and releasing via reversible redox reactions. Myoglobin charge trapping layer in OFET-based memory showed a considerable memory window, which depended proportionally on the concentrations of myoglobin solutions. We obtained the maximum memory window of ~20 V as well as good endurance properties in ambient conditions. Also, other redox proteins could be successfully applied to the memory device which showed a reliable memory window. | - |
dc.description.tableofcontents | Abstract ⅰ
Contents ⅱ List of Tables ⅴ List of Figures ⅵ 1. Introduction 1 1.1 Organic Electronics 1 1.2 Memory Devices 2 1.3 Organic Field-Effect Transistor Memory 4 1.4 Redox Proteins 6 2. Experimental Procedures 12 2.1 Materials and Characterization 12 2.2 Fabrication of the Charge Trapping Layer 13 2.3 Fabrication of OFET-based Memory 14 3. Result and Discussion 16 3.1 Characteristics of Myoglobin layer 16 3.2 Transistor Characteristics of OFET-based memory with Myoglobin as a Charge Trapping Element 19 3.3 Performance of OFET-based Memory with Myoglobin as a Charge Trapping Element 24 3.4 Performance of OFET-based Memory with Other Redox Proteins as a Charge Trapping Element 30 4. Conclusion 33 References 34 초록 (국문) 37 | - |
dc.format | application/pdf | - |
dc.format.extent | 1164002 bytes | - |
dc.format.medium | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | 서울대학교 대학원 | - |
dc.subject | non-volatile memory | - |
dc.subject | organic field-effect transistor memory | - |
dc.subject | charge trapping | - |
dc.subject | redox proteins | - |
dc.subject | heme structure | - |
dc.subject.ddc | 620 | - |
dc.title | Non-volatile Memory Effect of Redox Proteins | - |
dc.title.alternative | 환원 단백질의 비휘발성 메모리 효과 | - |
dc.type | Thesis | - |
dc.contributor.AlternativeAuthor | Jihyun Lee | - |
dc.description.degree | Master | - |
dc.citation.pages | vii, 38 | - |
dc.contributor.affiliation | 융합과학기술대학원 나노융합학과 | - |
dc.date.awarded | 2012-08 | - |
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