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Growth of In-rich InGaN nanostructures and investigation of their structural, optical, and device properties : 높은 In 조성의 InGaNGaN 나노 구조의 성장 및 구조적, 광학적 소자 특성에 대한 고찰
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속화학기상증착법 ; Metalorganic chemical vapor deposition (MOCVD) ; GaN ; In-rich InGaN ; 높은 In 조성의 InGaN ; InGaN ; InN ; InN ; 양자점 ; Nanostructure ; 양자우물 ; Quantum dot (QD) ; 광소자 ; Quantum well (QW) ; 내부전기장효과 ; Light Emitting Diodes (LEDs) ; Internal electric field effect
- Description
- Thesis(doctor`s)--서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045084
https://hdl.handle.net/10371/13519
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