Publications
Detailed Information
Phase change characteristics of new chalcogenide materials for phase change random access memory application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 오진호 | - |
| dc.date.accessioned | 2009-11-18T22:42:55Z | - |
| dc.date.available | 2009-11-18T22:42:55Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039471 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13570 | - |
| dc.description | Thesis(doctors)--서울대학교 대학원 :재료공학부,2008.2. | eng |
| dc.format.extent | xviii, 243 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | Ge2Sb2Te5 | eng |
| dc.subject | Ge2Sb2Te5 | eng |
| dc.subject | PRAM | eng |
| dc.subject | PRAM | eng |
| dc.subject | Nitrogen doped Sb2Te3 | eng |
| dc.subject | Nitrogen doped Sb2Te3 | eng |
| dc.subject | Bi2Te3 incorporated Ge2Sb2Te5 | eng |
| dc.subject | Bi2Te3 incorporated Ge2Sb2Te5 | eng |
| dc.subject | Ge-Bi-Te | eng |
| dc.subject | Ge-Bi-Te | eng |
| dc.subject | New SET operation pulse | eng |
| dc.subject | New SET operation pulse | eng |
| dc.title | Phase change characteristics of new chalcogenide materials for phase change random access memory application | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.