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Phase change characteristics of new chalcogenide materials for phase change random access memory application

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author오진호-
dc.date.accessioned2009-11-18T22:42:55Z-
dc.date.available2009-11-18T22:42:55Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039471eng
dc.identifier.urihttps://hdl.handle.net/10371/13570-
dc.descriptionThesis(doctors)--서울대학교 대학원 :재료공학부,2008.2.eng
dc.format.extentxviii, 243 p.eng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectGe2Sb2Te5eng
dc.subjectGe2Sb2Te5eng
dc.subjectPRAMeng
dc.subjectPRAMeng
dc.subjectNitrogen doped Sb2Te3eng
dc.subjectNitrogen doped Sb2Te3eng
dc.subjectBi2Te3 incorporated Ge2Sb2Te5eng
dc.subjectBi2Te3 incorporated Ge2Sb2Te5eng
dc.subjectGe-Bi-Teeng
dc.subjectGe-Bi-Teeng
dc.subjectNew SET operation pulseeng
dc.subjectNew SET operation pulseeng
dc.titlePhase change characteristics of new chalcogenide materials for phase change random access memory applicationeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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