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Conduction mechanism change according to barrier height of oxide hetero-interface diode : 산화물 적층 계면의 박막 다이오드의 장벽 높이에 따른 전도 메커니즘의 변화
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- Authors
- Advisor
- 김연상
- Major
- 융합과학기술대학원 융합과학부
- Issue Date
- 2017-08
- Publisher
- 서울대학교 융합과학기술대학원
- Keywords
- oxide hetero interface ; thin film diode ; barrier height ; mechanism shift ; interface dipole
- Description
- 학위논문 (석사)-- 서울대학교 융합과학기술대학원 융합과학부, 2017. 8. 김연상.
- Abstract
- An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current (SCLC) model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism shift occurs at a critical thickness. This phenomenon is seen by a decrease in the barrier height at the insulator / semiconductor interface as the thickness of the insulator increases. This paper shows that the barrier heights of oxide hetero-interface thin film diodes can be changed by simple engineering of the insulator layer thickness. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.
- Language
- English
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