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Individually addressable hybrid dimensional nanoarchitecture device arrays : 개별 어드레싱이 가능한 복합차원 나노소자 어레이

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dc.contributor.advisor이규철-
dc.contributor.author최영빈-
dc.date.accessioned2018-05-28T17:06:13Z-
dc.date.available2018-05-28T17:06:13Z-
dc.date.issued2018-02-
dc.identifier.other000000151398-
dc.identifier.urihttps://hdl.handle.net/10371/141093-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 자연과학대학 물리·천문학부, 2018. 2. 이규철.-
dc.description.abstractOne-dimensional (1D) semiconductor nanomaterial arrays grown on two-dimensional (2D) layered nanomaterials can provide an excellent platform for realizing novel electronic and optoelectronic devices by synergistically combining the unique physical properties of 1D and 2D nanomaterials. 1D semiconductor nanomaterials work as efficient channels for carrier transport, thereby greatly improving the device performances of electronic and optoelectronic devices. Moreover, graphene layers, which have excellent electrical and thermal conductivities, and high mechanical strength and elasticity, are novel substrates that offer new functionalities such as transferability and flexibility. This dissertation presents the fabrication and characteristics of individually addressable nanorod device arrays based on 1D+2D hybrid dimensional nanomaterials.
Ultrathin, flexible, and individually addressable ZnO nanorod device arrays on graphene layers were demonstrated. Using this system, we investigated the individual electrical characteristics of single ZnO nanorod within the arrays. Additionally, based on the optoelectronic and piezoelectronic characteristics of ZnO nanorods, we investigated photodetector and pressure sensor characteristics of the nanorod device arrays. Moreover, light-emitting diode (LED) arrays were fabricated using GaN/ZnO coaxial nanorod heterostructure arrays and their device characteristics were investigated. Metal-cored nitride microtube structures are discussed as a method to significantly improve nanostructured LED performance by improving the current-spreading characteristics.
In addition to 1D+2D hybrid dimensional nanomaterial-based devices, semiconductor microstructure arrays grown on graphene substrates were used to show their potential for microdisplay. GaN microdisk LED arrays grown on graphene dots were assembled in ultrathin and individually addressable crossbar array for flexible, high-resolution microdisplay. Furthermore, for full-color microdisplay, morphology-controlled GaN microdonut-shaped and micropyramidal LEDs were used to demonstrate variable-color light-emitters. The interesting electrical and electroluminescence characteristics of the GaN nanoarchitecture LEDs are presented. The origin of multicolor emission is also investigated by analysing the structure and chemical composition of the LEDs by TEM.
The catalyst-free molecular beam epitaxy (MBE) growth of InxGa1−xAs/InAs coaxial nanorod heterostructures on graphene layers are also demonstrated. Transmission electron microscopy (TEM) was used to investigate the crystallinity of the arsenide nanorods grown on graphene layers. Additionally, RHEED was used to investigate the growth behavior of nanorods on graphene layers in real time.
Finally, monolithic integration of wide and narrow band gap semiconductor nanorods vertically on each surface of graphene are demonstrated by showing InAs nanorods/graphene layers/ZnO nanorods double heterostructures. Their structural characteristics are investigated by both the cross-sectional and plan view TEM. Moreover, their dual-wavelength photodetector characteristics are demonstrated.		-
dc.description.tableofcontentsChapter 1. Introduction 1
1.1. Hybrid dimensional nanomaterials and nanodevices 1
1.2. Objective and approach 2
1.3. Outline 3
Chapter 2. Background and literature survey 5
2.1. Nanodevices made of 1D semiconductor nanomaterials assembly 5
2.2.1. Horizontally assembled 1D nanomaterial-based devices 5
2.2.2. Vertically aligned 1D nanomaterial-based devices 7
2.2. Semiconductor nano- and micro-structure devices on graphen substrates 11
2.3. Ultrathin and flexible devices 15
Chapter 3. Experimental methods 18
3.1. Growth of semiconductor nanostructures on graphene substrates 18
3.1.1. Preparation of graphene substrates 18
3.1.2. Selective-area metal-organic vapor-phase epitaxy of ZnO and GaN semiconductors 19
3.1.3. Catalyst-free molecular beam epitaxy of InxGa1xAs/InAs coaxial nanorod heterostructures on graphene layers 22
3.2. Fabrication of ultrathin and individually addressable nanorod device arrays 24
3.2.1. Preparation of ultrathin layers composed of nanorod arrays on graphene layers 24
3.2.2. Microelectrodes formation on ultrathin layers 25
3.3. Fabrication of nanoarchitecture light-emitting diodes 26
3.3.1. GaN micropyramid and microdonut LED fabrication 26
3.3.2. Metal-cored GaN microtube LED fabrication 27
3.4. Fabrication of ultrathin microdisplay using GaN microdisks grown on graphene dots 28
3.4.1. Transfer and assembly of microdisk LEDs in ultrathin form 28
3.4.2. Single walled carbon nanotubes (SWCNT) embedded metal microelectrodes 31
3.5. Electrical and optical characterization 32
3.4.1. Electrical characterizations of individually addressable nanorod device arrays 32
3.4.2. Photodetector characterizations 33
3.4.3. Pressure sensor characterizations 34
3.4.4. LED characterizations 36
3.6. Structural characterization 37
Chapter 4. Individually addressable nanorod device arrays on graphene substrate 38
4.1. Introduction 38
4.2. Ultrathin and individually addressable ZnO nanorod device arrays on graphene layers 40
4.2.1. Electrical characteristics of individual ZnO nanorod devices 45
4.2.2. Flexible device characteristics 48
4.3. High-spatial-resolution ZnO photodetector arrays on graphene 51
4.3.1. Photodetector characteristics of ZnO nanorod devices 51
4.3.2. Spectral and temporal responses 52
4.4. High-spatial-resolution ZnO nanorod pressure sensor arrays on graphene 54
4.5. Light-emitting diodes using GaN/ZnO coaxial nanorod arrays 57
4.5.1. GaN/ZnO coaxial nanorod LED arrays on graphene 58
4.5.2. Metal-cored nitride semiconductor microtube LED arrays 62
4.6. Summary 77
Chapter 5. Microstructure light-emitting diode arrays on graphene substrates for display applications 79
5.1. Introduction 79
5.2. GaN microdisk light-emitting diode display fabricated on graphene 80
5.3.1. Device structure 81
5.3.2. Device characteristics of individually addressable GaN microdisk LEDs 83
5.3. Morphology-controlled GaN nanoarchitecture LED arrays for full-color microdisplay applications 89
5.2.1. Monolithic multicolor GaN micropyramid LED array 89
5.2.2. Variable color GaN microdonut LED array 100
5.4. Summary 110
Chapter 6. Concluding remarks and outlooks 111
6.1. Summary 111
6.2. Suggestions for future works 11
Appendix A. Molecular beam epitaxy of arsenide semiconductor nanorods on graphene 113
A.1. Introduction 113
A.2. Catalyst-free molecular beam epitaxy (MBE) of III-As coaxial semiconductor nanorod heterostructures on graphene 114
A.2.1. Growth method and general morphology of InAs/InxGa1xAs nanorods on graphene 114
A.2.2. Effect of growth temperature 118
A.2.3. Effect of beam equivalent fluxes 119
A.3. In-situ characterization using reflection high energy electron diffraction (RHEED) 122
A.4. Ex-situ characterization using transmission electron microscopy (TEM) 126
Appendix B. Monolithic integration of wide and narrow band gap semiconductor nanorods on graphene substrate 133
B.1. Introduction 133
B.2. ZnO nanorods/graphene layers/InAs nanorods heterostructures 134
B.2.1. Growth and structural characteristics 134
B.2.2. Dual wavelength photodetector device characteristics 143
B.3. Summary 145
References 146
Abstract in Korean 157
Curriculum Vitae 160		-
dc.formatapplication/pdf-
dc.format.extent8667180 bytes-
dc.format.mediumapplication/pdf-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subject나노막대-
dc.subject그래핀-
dc.subject.ddc523.01-
dc.titleIndividually addressable hybrid dimensional nanoarchitecture device arrays-
dc.title.alternative개별 어드레싱이 가능한 복합차원 나노소자 어레이-
dc.typeThesis-
dc.contributor.AlternativeAuthorYoungbin Tchoe-
dc.description.degreeDoctor-
dc.contributor.affiliation자연과학대학 물리·천문학부-
dc.date.awarded2018-02-
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