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탄화규소를 이용한 UV(Ultraviolet) 쇼트키 광다이오드 제작에 관한 연구
Fabrication of 4H-SiC Schottky barrier photodiodes for Ultraviolet detector

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author정상용-
dc.date.accessioned2009-11-24T02:46:02Z-
dc.date.available2009-11-24T02:46:02Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051078kor
dc.identifier.urihttp://hdl.handle.net/10371/14252-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2005.kor
dc.format.extentix, 76 장kor
dc.language.isokokor
dc.publisher서울대학교 대학원kor
dc.subject4H-SiCkor
dc.subjectSchottky barrier photodiodekor
dc.subjectLeakage currentkor
dc.subjectResponsivitykor
dc.title탄화규소를 이용한 UV(Ultraviolet) 쇼트키 광다이오드 제작에 관한 연구kor
dc.title.alternativeFabrication of 4H-SiC Schottky barrier photodiodes for Ultraviolet detectorkor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Master's Degree_재료공학부)
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