A-site modification effect of 2-dimensional dielectric nanosheets

Abstract

The demand for high-k dielectric thin films have been continuously increasing to satisfy the requirement of next-generation electronic devices such as ultra-thin dielectric layer in high capacitance multilayer ceramic capacitors and gate dielectric for high mobility thin film transistor. In addition, as these devices are becoming highly integtraed, the thickness of dielectric layer should be reduced under tens of nanometers. The well-known dielectric films for capacitors are BaTiO3 based perovskites. However, these materials usually decrease their dielectric permittivity as thickness reduces because of the size-effect