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Detection of Thermal Transport Using GIDL (Gate Induced Drain Leakage) Current : GIDL 전류를 이용한 열 전달 감지

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dc.contributor.advisor박병국, 박영준-
dc.contributor.author유낙원-
dc.date.accessioned2018-11-12T00:55:20Z-
dc.date.available2018-11-12T00:55:20Z-
dc.date.issued2018-08-
dc.identifier.other000000153156-
dc.identifier.urihttps://hdl.handle.net/10371/143060-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 공과대학 전기·컴퓨터공학부, 2018. 8. 박병국, 박영준.-
dc.description.abstractWe report a method and experiment to detect the transport of the lattice phonons generated by hot electrons during the MOSFET operation. We used the band-to-band tunneling (BTBT) device as a phonon sensor. This method is useful to detect the phonon energy even in non-equilibrium as well as the equilibrium. We explain the fundamental principle that the BTBT current can estimate the phonon energy even in non-equilibrium. In order to validate the idea, we measured the phonon energy generated by the hot electron scattering at a nearby MOSFET (as a phonon generator) with the gate-induced drain leakage (GIDL) current of the MOSFET (as a phonon sensor). For the experiment, we designed the 5-transistors scheme, in which one transistor is the phonon sensor and the other 4 transistors are the phonon generators. In this experiment, we use the lock-in technique in order to measure the increment of the GIDL current which is caused by an arrival of the phonons transported from the phonon generator. In the experiment at the room temperature, during the operation of each phonon generator on different distances and the gate bias conditions, we estimate the equivalent lattice temperature from the variation of the GIDL current on the assumption of the system in the near-equilibrium. Moreover, by performing the same experiment at low temperature, we measure the phonon energy under a non-equilibrium with the phonon sensor based on the BTBT. Additionally, our phonon sensor has the advantage of high spatial resolution, since the GIDL current results from the BTBT in a very small overlap region (about 10 nm) of the gate and drain of the MOSFET. With this advantage, we observed the retardation of the phonons generated in a MOSFET, by applying small signal modelling to the method. Finally, as the measurements were made at different temperatures, we observed the change in the phonon transport properties due to changes in thermal conductivity.-
dc.description.tableofcontentsChapter 1 Introduction 1

1.1 Motivation 1

1.2 Concepts of the phonon sensor 6

1.3 Outline of the Dissertation 10

Chapter 2 Principle of the phonon sensor based on the BTBT 11

2.1 Introduction 11

2.2 Phonon generation in MOSFET and decay process 12

2.3 Phonon effects on the bandgap 16

2.4 Relation between GIDL current and phonon energy 22

2.5 Phonon energy generated in the phonon generator 27

Chapter 3 Experiment for detection of phonons using Gate Induced Drain Leakage current 31

3.1 Introduction 31

3.2 Device design for phonon generator/sensor: 5-transistors scheme 32

3.3 Experimental setup 34

3.4 Experimental results 37

3.5 Discussion on the number phonon in equilibrium and non-equilibrium 39

Chapter 4 Detection of the phonons in non-equilibrium 45

4.1 Introduction 45

4.2 Decay of the phonons in low temperature 47

4.3 Experimental results and discussion 50

Chapter 5 Measurement of temperature characteristics of phonon transport using the GIDL 57

5.1 Introduction 57

5.2 Experimental Setup and Method for measurement of phonon transport on chip 58

5.2.1 Step heating method 60

5.2.2 Sinusoidal heating method 63

5.2.3 Results and discussion 65

5.3 Measurement of temperature characteristics of phonon transport using the GIDL current 69

5.3.1 Small signal method 70

5.3.2 Results and discussion 73

Chapter 6 Conclusion 76

6.1 Summary 76

6.2 Future work 78

Bibliography 80

초 록 83
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dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subject.ddc621.3-
dc.titleDetection of Thermal Transport Using GIDL (Gate Induced Drain Leakage) Current-
dc.title.alternativeGIDL 전류를 이용한 열 전달 감지-
dc.typeThesis-
dc.description.degreeDoctor-
dc.contributor.affiliation공과대학 전기·컴퓨터공학부-
dc.date.awarded2018-08-
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