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LP-MOCVD를 이용한 (001) GaAs 기판 위의 InAs 자발형성 양자점 성장
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2004
- Publisher
- 서울대학교 대학원
- Keywords
- InAs ; Inas ; GaAs ; Gaas ; 자발형성 양자점 (SAQDs) ; Self-assembled quantum dots (saqds) ; 유기금속 화학기상증착법 (MOCVD) ; Low pressure metalorganic chemical vapor deposition (lp-mocvd) ; PL (Photo Luminescence) ; Photo luminescence (pl)
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2004.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055607
https://hdl.handle.net/10371/14341
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