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Fabrication and characterization of Ru4HSiC Schottky diode
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김형준 | - |
dc.contributor.author | 송인복 | - |
dc.date.accessioned | 2009-11-24T03:39:31Z | - |
dc.date.available | 2009-11-24T03:39:31Z | - |
dc.date.copyright | 2004. | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000054312 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/14372 | - |
dc.description | Thesis (master`s)--서울대학교 대학원 :재료공학부,2004. | eng |
dc.format.extent | xvii, 100 leaves | eng |
dc.language.iso | en | eng |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | Ru | eng |
dc.subject | SiC | eng |
dc.subject | Schottky | eng |
dc.subject | annealing | eng |
dc.subject | CVD | eng |
dc.subject | Evaporation | eng |
dc.subject | Sputtering | eng |
dc.title | Fabrication and characterization of Ru4HSiC Schottky diode | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Master | eng |
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