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Fabrication and characterization of Ru4HSiC Schottky diode

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author송인복-
dc.date.accessioned2009-11-24T03:39:31Z-
dc.date.available2009-11-24T03:39:31Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000054312eng
dc.identifier.urihttps://hdl.handle.net/10371/14372-
dc.descriptionThesis (master`s)--서울대학교 대학원 :재료공학부,2004.eng
dc.format.extentxvii, 100 leaveseng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectRueng
dc.subjectSiCeng
dc.subjectSchottkyeng
dc.subjectannealingeng
dc.subjectCVDeng
dc.subjectEvaporationeng
dc.subjectSputteringeng
dc.titleFabrication and characterization of Ru4HSiC Schottky diodeeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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