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탄화규소를 이용한 고전압 쇼트키 다이오드 제작

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author김대환-
dc.date.accessioned2009-11-24T03:43:00Z-
dc.date.available2009-11-24T03:43:00Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000054313kor
dc.identifier.urihttps://hdl.handle.net/10371/14380-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2004.kor
dc.format.extentxiii, 79 장kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subject4H-SiCkor
dc.subjectSchottky barrier diodekor
dc.subjectspecific on resistance Ronkor
dc.subject항복전압 VBkor
dc.title탄화규소를 이용한 고전압 쇼트키 다이오드 제작kor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Master's Degree_재료공학부)
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