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탄화규소의 반응성 이온 식각 특성에 관한 연구
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- Authors
- Advisor
- 김형준
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- 4H-SiC ; 4H-SiC ; 반응성 이온 식각 ; Reactive ion etching ; Schottky diode ; Schottky diode ; 장벽 높이 ; Barrier height ; 역방향 누설 전류 ; Reverse leakage current ; 표면 결함 ; Surface defects ; RMS 거칠기 ; RMS roughness
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2003.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000057465
https://hdl.handle.net/10371/14722
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