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양극 산화법 통해 합성된 다공구조 SnO₂의 가스 감응 특성 : Nano-porous SnO₂ film gas sensor formed by anodic oxidation

DC Field Value Language
dc.contributor.advisor홍성현-
dc.contributor.author전정훈-
dc.date.accessioned2009-11-24T23:44:58Z-
dc.date.available2009-11-24T23:44:58Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038700kor
dc.identifier.urihttps://hdl.handle.net/10371/14741-
dc.description학위논문(석사) --서울대학교 대학원 :재료공학부,2009.8.kor
dc.format.extentvii, 86장kor
dc.language.isokokor
dc.publisher서울대학교 대학원kor
dc.subject반도체식 가스센서kor
dc.subjectPorouskor
dc.subject다공성kor
dc.subjectSnO₂kor
dc.subject산화주석kor
dc.subjectsemiconductor gas sensorkor
dc.subject가스센서kor
dc.title양극 산화법 통해 합성된 다공구조 SnO₂의 가스 감응 특성kor
dc.title.alternativeNano-porous SnO₂ film gas sensor formed by anodic oxidationkor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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