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RF Magnetron Sputtering법에 의해 증착된 CNTSnO2의 H2 감응 특성 및 ITOSnO2의 NO2 감응 특성 : H2 sensing property of CNTSnO2 and NO2 sensing property of ITOSnO2 deposited by RF Magnetron Sputtering

DC Field Value Language
dc.contributor.advisor홍성현-
dc.contributor.author양명-
dc.date.accessioned2009-11-24T23:56:54Z-
dc.date.available2009-11-24T23:56:54Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036879kor
dc.identifier.urihttps://hdl.handle.net/10371/14783-
dc.description학위논문(석사) --서울대학교 대학원 :재료공학부, 2009.2.kor
dc.format.extent93장kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subject반도체식 가스센서kor
dc.subjectsemiconductor gas sensorkor
dc.subjectCNTkor
dc.subjectCNTkor
dc.subjectSnO2kor
dc.subjectSnO2kor
dc.subjectITOkor
dc.subjectITOkor
dc.subjectSnO2kor
dc.subjectSnO2kor
dc.titleRF Magnetron Sputtering법에 의해 증착된 CNTSnO2의 H2 감응 특성 및 ITOSnO2의 NO2 감응 특성kor
dc.title.alternativeH2 sensing property of CNTSnO2 and NO2 sensing property of ITOSnO2 deposited by RF Magnetron Sputteringkor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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