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(The) study on the crystallization behavior by the current from substrate d.c. bias voltage during sputter deposition

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dc.contributor.advisor김기범-
dc.contributor.author이성호-
dc.date.accessioned2009-11-25-
dc.date.available2009-11-25-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041102eng
dc.identifier.urihttps://hdl.handle.net/10371/14861-
dc.descriptionThesis(masters) --서울대학교 대학원 :재료공학부,2008.2.eng
dc.format.extentix, 61 장eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject비정질 박막eng
dc.subjectamorphous thin filmeng
dc.subject결정화eng
dc.subjectcrystallizationeng
dc.subject양극 바이어스 플라즈마eng
dc.subjectpositive bias plasmaeng
dc.subjectJoule heatingeng
dc.subjectJoule heatingeng
dc.subjectGe2Sb2Te5eng
dc.subjectGe2Sb2Te5eng
dc.subject저마늄eng
dc.subjectGeeng
dc.title(The) study on the crystallization behavior by the current from substrate d.c. bias voltage during sputter depositioneng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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