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Two-step epitaxial Ge growth on Si(100) using UHV-CVD : 초고진공 화학기상증착법을 이용한 실리콘 (100) 기판 위의 이단계 게르마늄 에피성장
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- 게르마늄 ; Ge ; 이단계 성장법 ; UHV-CVD ; 초고진공 화학기상증착법 ; two-step growth ; 저온 ; low temperature
- Description
- Thesis(masters) --서울대학교 대학원 :재료공학부, 2009.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036876
https://hdl.handle.net/10371/14902
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