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(The) growth of InAs quantum dots with antimony surfactant
안티몬 계면활성제를 이용한 InAs 양자점 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author심욱-
dc.date.accessioned2009-11-25T02:05:07Z-
dc.date.available2009-11-25T02:05:07Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036878eng
dc.identifier.urihttps://hdl.handle.net/10371/14948-
dc.descriptionThesis(masters) --서울대학교 대학원 :재료공학부, 2009.2.eng
dc.format.extent89 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject저압 유기금속 기상화학 증착법 (MOCVD)eng
dc.subject자발형성 양자점 (SAQD, QD)eng
dc.subjectInAseng
dc.subjectInGaAseng
dc.subjectGaAseng
dc.subject안티몬 (Sb)eng
dc.subject계면활성제 (surfactant)eng
dc.subject원자전자현미경 (AFM)eng
dc.subject광여기 발광법 (PL)eng
dc.subjectMetal organic chemical vapor deposition (MOCVD)eng
dc.subjectquantum dots (QDs)eng
dc.subjectantimony (Sb)eng
dc.subjectsurfactanteng
dc.subjectphotoluminescence (PL)eng
dc.subjectatomic force microscopy (AFM)eng
dc.title(The) growth of InAs quantum dots with antimony surfactanteng
dc.title.alternative안티몬 계면활성제를 이용한 InAs 양자점 성장eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Master's Degree_재료공학부)
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