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Study on the double threshold switching effect in bi-layer structure of PRAM and the feasibility for multi-level operation

DC Field Value Language
dc.contributor.advisor김기범-
dc.contributor.author전현구-
dc.date.accessioned2009-11-25T02:34:10Z-
dc.date.available2009-11-25T02:34:10Z-
dc.date.copyright2006.-
dc.date.issued2006-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047514eng
dc.identifier.urihttps://hdl.handle.net/10371/14997-
dc.descriptionThesis(master`s)--서울대학교 대학원 :재료공학부,2006.eng
dc.format.extent74 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject상변화 메모리eng
dc.subjectPRAMeng
dc.subjectGe2Sb2Te5eng
dc.subjectGe2Sb2Te5eng
dc.subjectTiNeng
dc.subjectTiNeng
dc.subject다중 레벨 동작eng
dc.subjectMulti-level operationeng
dc.subject이중 임계 스위칭eng
dc.subjectBi-layered structureeng
dc.subject직류 I-V특성eng
dc.subjectDouble threshold switchingeng
dc.subject펄스 테스트eng
dc.subjectDC I-V characteristiceng
dc.subject스퍼터 증착eng
dc.subjectPulse testeng
dc.subject저항eng
dc.subjectSputter Depositioneng
dc.subject비정질eng
dc.subjectResistanceeng
dc.subject결정질eng
dc.subjectamorphouseng
dc.subjectcrystaleng
dc.titleStudy on the double threshold switching effect in bi-layer structure of PRAM and the feasibility for multi-level operationeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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