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Pr₁_xCaxMnO₃ 박막의 전기저항 스위칭 특성 : Resistive switching characteristics of Pr₁_xCaxMnO₃ thin films

DC Field Value Language
dc.contributor.advisor유상임-
dc.contributor.author정성목-
dc.date.accessioned2009-11-25T03:27:50Z-
dc.date.available2009-11-25T03:27:50Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045715kor
dc.identifier.urihttps://hdl.handle.net/10371/15120-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2007.kor
dc.format.extentvi, 72 장kor
dc.language.isokokor
dc.publisher서울대학교 대학원kor
dc.subjectPr1-xCaxMnO3kor
dc.subjectPr1-xCaxMnO3kor
dc.subjectPLD(Pulsed Laser Deposition)kor
dc.subjectPLD(Pulsed Laser Depositon)kor
dc.subject미세구조kor
dc.subjectMicrostructure Resistive switching characteristicskor
dc.subject저항스위칭 특성kor
dc.titlePr₁_xCaxMnO₃ 박막의 전기저항 스위칭 특성kor
dc.title.alternativeResistive switching characteristics of Pr₁_xCaxMnO₃ thin filmskor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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