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Photoluminescence Enhancement in CdS Quantum Dots by Nanostructural Relaxation

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Authors
이준희
Advisor
박병우
Major
재료공학부
Issue Date
2012-02
Publisher
서울대학교 대학원
Description
학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2012. 2. 박병우.
Abstract
Photoluminescence enhancement and behavior of the initial action of CdS quantum dots in growth stage were observed via the post annealing process. After the process, the quantum dots with high optical quality were formed. The processes on CdS quantum dots reduced accumulated strains and acted reduce non-radiative recombination. Compared to the as-synthesis CdS quantum dots (quantum efficiency 1%), the heat treated sample showed enhanced luminescence properties (quantum efficiency 29%). Consequently, post annealing process on CdS quantum dots could lead to quantum efficiency enhancement and size change could be feasible and predictable quantitatively in the same experimental environment.
Language
eng
URI
https://hdl.handle.net/10371/155436

http://dcollection.snu.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000001673
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Master's Degree_재료공학부)
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