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Light and temperature effects on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor : HfInZnO로 구성된 산화물 박막 소자의 전압, 빛, 온도에 의한 전기적 특성 변화

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dc.contributor.advisor박병국-
dc.contributor.author권대웅-
dc.date.accessioned2019-07-09T16:09:16Z-
dc.date.available2019-07-09T16:09:16Z-
dc.date.issued2011-02-
dc.identifier.other000000030645-
dc.identifier.urihttps://hdl.handle.net/10371/157442-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000030645ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 나노융합학과, 2011.2. 박병국.-
dc.format.extentiv, 59 leaves-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subjectHIZO 박막소자의 전기적 특성변화-
dc.subject빛에 의한 전기적 특성변화-
dc.subject온도변화로 인한 전기적 특성변화-
dc.subjectInstability of HIZO TFT-
dc.subjectBias-induced instability of HIZO TFT-
dc.subjectTemperature dependence of HIZO TFT-
dc.subjectLight-induced instability of HIZO TFT-
dc.titleLight and temperature effects on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor-
dc.title.alternativeHfInZnO로 구성된 산화물 박막 소자의 전압, 빛, 온도에 의한 전기적 특성 변화-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation나노융합학과-
dc.date.awarded2011-02-
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