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Growth behavior and characteristics of Ru based electrodes grown by CVD/ALD for next generation DRAM device
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- Authors
- Advisor
- 황철성
- Major
- 재료공학부
- Issue Date
- 2011-08
- Publisher
- 서울대학교 대학원
- Keywords
- 루테늄 ; 루테늄옥사이드. 스트론튬루테늄옥사이드 ; 루테늄사산화물 ; 티타늄옥사이드 ; 스트론튬티타늄옥사이드 ; 화학기상증착법 ; 원자층증착법 ; 유전상수 ; 누설전류 ; 디램 ; 커패시터 ; Ru ; RuO2 ; SrRuO3 ; RuO4 ; Sr(iPr3Cp)2 ; TiO2 ; SrTiO3 ; Pulsed Chemical Vapor Deposition ; Atomic Layer Deposition ; Dielectric constant ; Leakage current ; DRAM ; Capacitor
- Description
- 학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2011.8. 황철성.
- Language
- eng
- URI
- https://hdl.handle.net/10371/158944
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031006
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