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Polarization switching behavior in the dielectric/ferroelectric bi-layer capacitors

DC Field Value Language
dc.contributor.advisor황철성-
dc.contributor.author이현주-
dc.date.accessioned2019-07-10T04:11:13Z-
dc.date.available2019-07-10T04:11:13Z-
dc.date.issued2011-02-
dc.identifier.other000000028943-
dc.identifier.urihttps://hdl.handle.net/10371/158977-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000028943ko_KR
dc.description학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2011.2. 황철성.-
dc.format.extentxvi, 158 p.-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subjectFerroelectric-
dc.subjectSeries capacitor-
dc.subjectPb(Zr-
dc.subjectTi)O3-
dc.subjectMn-doped BiFeO3-
dc.subjectPolarization switching-
dc.subjectMIFM-
dc.subjectMIMFM-
dc.subjectAl2O3 tunnel switch-
dc.titlePolarization switching behavior in the dielectric/ferroelectric bi-layer capacitors-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeDoctor-
dc.contributor.affiliation재료공학부-
dc.date.awarded2011-02-
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