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전해질 - 산화막 - 실리콘 시스템의 터널링 전류 해석 : Analysis of tunneling current in the Electrolyte - Oxide - Silicon system

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dc.contributor.advisor박영준-
dc.contributor.author최연규-
dc.date.accessioned2019-07-10T05:16:07Z-
dc.date.available2019-07-10T05:16:07Z-
dc.date.issued2011-02-
dc.identifier.other000000029964-
dc.identifier.urihttps://hdl.handle.net/10371/159570-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029964ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.2. 박영준.-
dc.format.extentvii, 57 장-
dc.language.isokor-
dc.publisher서울대학교 대학원-
dc.subjectEOS-
dc.subject터널링 전류-
dc.subjectEDL-
dc.subject전기 도금-
dc.subject산화막 열화-
dc.subjecttunneling current-
dc.subjectElectroplating-
dc.subjectoxide degradation-
dc.title전해질 - 산화막 - 실리콘 시스템의 터널링 전류 해석-
dc.title.alternativeAnalysis of tunneling current in the Electrolyte - Oxide - Silicon system-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation전기. 컴퓨터공학부-
dc.date.awarded2011-02-
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