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Recessed Ohmic Contact 를 이용한 AlGaN/GaN HEMT 의 성능 개선에 관한 연구 : Study on improving characteristics of AlGaN/GaN HEMTs with recessed ohmic contact
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 서광석 | - |
| dc.contributor.author | 손웅비 | - |
| dc.date.accessioned | 2019-07-10T05:22:15Z | - |
| dc.date.available | 2019-07-10T05:22:15Z | - |
| dc.date.issued | 2011-08 | - |
| dc.identifier.other | 000000031666 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/159630 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031666 | ko_KR |
| dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 서광석. | - |
| dc.format.extent | 39장 | - |
| dc.language.iso | kor | - |
| dc.publisher | 서울대학교 대학원 | - |
| dc.subject | AlGaN | - |
| dc.subject | GaN HEMT | - |
| dc.subject | Recessed Ohmic | - |
| dc.subject | 접촉저향 | - |
| dc.subject | 소자수율 | - |
| dc.subject | 출력전력 | - |
| dc.subject | Contact Resistance | - |
| dc.subject | Device Yield | - |
| dc.subject | Output power | - |
| dc.title | Recessed Ohmic Contact 를 이용한 AlGaN/GaN HEMT 의 성능 개선에 관한 연구 | - |
| dc.title.alternative | Study on improving characteristics of AlGaN/GaN HEMTs with recessed ohmic contact | - |
| dc.type | Thesis | - |
| dc.type | Dissertation | - |
| dc.description.degree | Master | - |
| dc.contributor.affiliation | 전기. 컴퓨터공학부 | - |
| dc.date.awarded | 2011-08 | - |
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