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Study on cell characteristic variations of three-dimensional stacked NAND flash memories : 3차원 적층형 낸드 플래시 메모리에서의 셀 특성 변화 연구

DC Field Value Language
dc.contributor.advisor이종호-
dc.contributor.author이명선-
dc.date.accessioned2019-07-10T05:23:45Z-
dc.date.available2019-07-10T05:23:45Z-
dc.date.issued2011-08-
dc.identifier.other000000031696-
dc.identifier.urihttps://hdl.handle.net/10371/159644-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031696ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 이종호.-
dc.format.extentv, 57장-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subject전하 트랩형 메모리-
dc.subjectSONOS-
dc.subjectTANOS-
dc.subject게이트로 둘러싸인-
dc.subject문턱 전압 이하 기울기-
dc.subjectCharge Trap Flash (CTF) memory-
dc.subjectGate-All-Around-
dc.subjectsubthreshold slope (SS)-
dc.titleStudy on cell characteristic variations of three-dimensional stacked NAND flash memories-
dc.title.alternative3차원 적층형 낸드 플래시 메모리에서의 셀 특성 변화 연구-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation전기. 컴퓨터공학부-
dc.date.awarded2011-08-
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