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Investigation on the characteristics of stress-induced hump in amorphous HfInZnO thin film transistors : HfInZnO로 구성된 산화물 박막 소자의 Stress로 인한 Hump 특성에 관한 연구

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author김장현-
dc.date.accessioned2019-07-10T05:24:15Z-
dc.date.available2019-07-10T05:24:15Z-
dc.date.issued2011-08-
dc.identifier.other000000031673-
dc.identifier.urihttps://hdl.handle.net/10371/159649-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031673ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 박병국.-
dc.format.extent47장-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subject비정질 HIZO 박막소자-
dc.subjecthump-
dc.subject빛과 음의 전압 스트레스-
dc.subjectSchottky 장벽-
dc.subject둥글어진 게이트-
dc.subjecta-HIZO TFTs-
dc.subjecthump characteristics-
dc.subjectlight and negative bias stress-
dc.subjectSchottky barrier-
dc.subjectrounded gate-
dc.titleInvestigation on the characteristics of stress-induced hump in amorphous HfInZnO thin film transistors-
dc.title.alternativeHfInZnO로 구성된 산화물 박막 소자의 Stress로 인한 Hump 특성에 관한 연구-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation전기. 컴퓨터공학부-
dc.date.awarded2011-08-
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