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Study on random telegraph noise in recessed channel array transistor : Recessed channel array transistor 구조에서의 random telegraph noise에 관한 연구

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dc.contributor.advisor신형철-
dc.contributor.author박선영-
dc.date.accessioned2019-07-10T05:24:41Z-
dc.date.available2019-07-10T05:24:41Z-
dc.date.issued2011-02-
dc.identifier.other000000029896-
dc.identifier.urihttps://hdl.handle.net/10371/159653-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029896ko_KR
dc.description학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.2. 신형철.-
dc.format.extentiv, 51 leaves-
dc.language.isoeng-
dc.publisher서울대학교 대학원-
dc.subject함몰 구조 MOSFETs (RC MOSFETs)-
dc.subjectRandom Telegraph Noise (RTN)-
dc.subjectRTS-
dc.subject게이트 유기 드레인 누설 전류-
dc.subjectLow Frequency Noise (LFN)-
dc.subjectRecessed Channel MOSFETs (RC MOSFETs)-
dc.subjectGate Induced Drain Leakage (GIDL) current-
dc.titleStudy on random telegraph noise in recessed channel array transistor-
dc.title.alternativeRecessed channel array transistor 구조에서의 random telegraph noise에 관한 연구-
dc.typeThesis-
dc.typeDissertation-
dc.description.degreeMaster-
dc.contributor.affiliation전기. 컴퓨터공학부-
dc.date.awarded2011-02-
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