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Study on random telegraph noise in GaN light-emitting diodes
GaN light-emitting diodes의 RTN 연구

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Authors
강태욱
Advisor
신형철
Major
협동과정 나노과학기술전공
Issue Date
2011-02
Publisher
서울대학교 대학원
Keywords
발광 다이오드저주파 잡음트랩디펙트활성화 에너지Random Telegraph NoiseRTNLow Frequency NoiseLFNTrapDefectActivation Energy. GaN LEDLight-Emitting Diodes.
Description
학위논문 (석사)-- 서울대학교 대학원 : 협동과정 나노과학기술전공, 2011.2. 신형철.
Language
Japanese
URI
http://hdl.handle.net/10371/160145

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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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