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Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface

Cited 19 time in Web of Science Cited 19 time in Scopus
Authors

Kim, Young Mo; Markurt, T.; Kim, Youjung; Zupancic, M.; Shin, Juyeon; Albrecht, M.; Char, Kookrin

Issue Date
2019-11
Publisher
Nature Publishing Group
Citation
Scientific Reports, Vol.9 No.1, p. 16202
Abstract
In order to explain the experimental sheet carrier density n(2D) at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrodinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2-3 pseudocubic unit cells at the coherently strained interface.
ISSN
2045-2322
Language
ENG
URI
https://hdl.handle.net/10371/163891
DOI
https://doi.org/10.1038/s41598-019-52772-8
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