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Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

Cited 10 time in Web of Science Cited 11 time in Scopus
Issue Date
2017-06
Citation
2D Materials, Vol.4 No.2, p. 024001
Keywords
graphenesolid carbon sourcegraphene-dielectric bi-layerpolydimethylsiloxaneorganic field-effect transistor
Abstract
To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.
ISSN
2053-1583
URI
https://hdl.handle.net/10371/164455
DOI
https://doi.org/10.1088/2053-1583/aa5408
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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