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Large-scale metal nanoelectrode arrays based on printed nanowire lithography for nanowire complementary inverters

Cited 10 time in Web of Science Cited 9 time in Scopus
Authors
Ko, Han-Seung; Lee, Yeongjun; Min, Sung-Yong; Kwon, Sung-Joo; Lee, Tae-Woo
Issue Date
2017-11
Citation
Nanoscale, Vol.9 No.41, pp.15766-15772
Abstract
Nanowire (NW) complementary inverters based on NW channels and NW electrodes are a promising core logic unit of future subminiature, high density and textile-type configured electronic circuits. However, existing approaches based on short NWs (<150 μm) or non-woven nanofibers cannot provide precisely-coordinated NW inverters due to the difficulty in the position and alignment control of each NW. In particular, the large-scale fabrication of highly-aligned metal nanoelectrode (NE) arrays with low resistivity is a challenging issue. Here, we developed large-scale-aligned AgNE arrays with very low resistivity by using printed NW lithography, and then demonstrated NW complementary inverters by combining with direct-printed organic semiconducting NWs. The width of the AgNEs was controlled from 250 to 1000 nm; their resistivity was 2.6 μΩ cm which is quite comparable with that of Ag films (1.6 μΩ cm). We expect that this approach will facilitate advances in the large-scale fabrication of nanoelectronics which will be compatible with printed electronics.
ISSN
2040-3364
URI
https://hdl.handle.net/10371/164493
DOI
https://doi.org/10.1039/c7nr06152h
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
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