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(The)Growth and the characterization on InAsInP quantum dot stacks : InAsInP 적층 양자점 구조의 성장 및 물성 분석

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author황희돈-
dc.date.accessioned2009-11-27T06:39:07Z-
dc.date.available2009-11-27T06:39:07Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059801eng
dc.identifier.urihttps://hdl.handle.net/10371/16786-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :재료공학부,2003.eng
dc.format.extentix, 120 leaveseng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectMetalotganic chemical vapor deposition(MOCVD)eng
dc.subject유기금속 화학 기상 증착법eng
dc.subjectself-assmebled quantum dots(SAQD)eng
dc.subject자발형성 양자점eng
dc.subjectvertically stacked quantum dots(VSQD)eng
dc.subject수직적층 양자점eng
dc.subjectInPeng
dc.subject표면 광 흡수법(SPA)eng
dc.subjectInAseng
dc.subject분광 반사도법(SR)eng
dc.title(The)Growth and the characterization on InAsInP quantum dot stackseng
dc.title.alternativeInAsInP 적층 양자점 구조의 성장 및 물성 분석eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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