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Electroplated Silver-Nickel Core-Shell Nanowire Network Electrodes for Highly Efficient Perovskite Nanoparticle Light-Emitting Diodes

Cited 18 time in Web of Science Cited 20 time in Scopus
Authors

Kang, Hyungseok; Choi, Seok-Ryul; Kim, Young-Hoon; Kim, Joo Sung; Kim, Sungjin; An, Byeong-Seon; Yang, Cheol-Woong; Myoung, Jae-Min; Lee, Tae-Woo; Kim, Jung-Gu; Cho, Jeong Ho

Issue Date
2020-09
Publisher
American Chemical Society
Citation
ACS Applied Materials and Interfaces, Vol.12 No.35, pp.39479-39486
Abstract
The low sheet resistance and high optical transparency of silver nanowires (AgNWs) make them a promising candidate for use as the flexible transparent electrode of light-emitting diodes (LEDs). In a perovskite LED (PeLED), however, the AgNW electrode can react with the overlying perovskite material by redox reactions, which limit the electroluminescence efficiency of the PeLED by causing the degradation of and generating defect states in the perovskite material. In this study, we prepared Ag-Ni core-shell NW electrodes using the solution-electroplating technique to realize highly efficient PeLEDs based on colloidal formamidinium lead bromide (FAPbBr(3)) nanoparticles (NPs). Solvated Ni ions from the NiSO4 source were deposited onto the surface of AgNW networks in three steps: (i) cathodic cleaning, (ii) adsorption of the Ni-ion complex onto the AgNW surface, and (iii) uniform electrodeposition of Ni. An ultrathin (similar to 3.5 nm) Ni layer was uniformly deposited onto the AgNW surface, which exhibited a sheet resistance of 16.7 Omega/sq and an optical transmittance of 90.2%. The Ag-Ni core-shell NWs not only increased the work function of the AgNW electrode, which facilitated hole injection into the emitting layer, but also suppressed the redox reaction between Ag and FAPbBr(3) NPs, which prevented the degradation of the emitting layer and the generation of defect states in it. The resulting PeLEDs based on FAPbBr(3) NPs with the Ag-Ni core-shell NWs showed high current efficiency of 44.01 cd/A, power efficiency of 35.45 lm/W, and external quantum efficiency of 9.67%.
ISSN
1944-8244
URI
https://hdl.handle.net/10371/171773
DOI
https://doi.org/10.1021/acsami.0c10386
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